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march 2015 docid027198 rev 1 1 / 16 this is inf ormation on a product in full production. www.st.com STP16N60M2, stu16n60m2 n - channel 600 v, 0.28 typ., 12 a mdmesh? m2 power mosfet in to -220 and ipak packages datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d STP16N60M2 600 v 0.32 12 a stu16n60m2 ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener - protected applications ? switching applications description these devices are n - channel power mosfets dev eloped using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, these devices exhibit low on - resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. table 1: device summary order code marking package packaging STP16N60M2 16n60m2 to -220 tube stu16n60m2 ipak 3 2 1 tab ipak 1 2 3 tab to-220 am15572v1_tab d(2, t ab) g(1) s(3)
contents STP16N60M2, stu16n60m2 2 / 16 docid027198 rev 1 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.1 electrical characteristics (curves) ...................................................... 6 3 test circuits ..................................................................................... 9 4 package mechanical data ............................................................. 10 4.1 to - 220 type a package information ................................................ 11 4.2 ipak (to - 25 1) type a package information ................................... 13 5 revision history ............................................................................ 15
STP16N60M2, stu16n60m2 electrical ratings docid027198 rev 1 3 / 16 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t c = 25 c 12 a i d drain current (continuous) at t c = 100 c 7.6 a i dm (1) drain current (pulsed) 48 a p tot total dissipation at t c = 25 c 110 w dv/dt (2) peak diode recovery voltage slope 15 v/ns dv/dt (3) . mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c notes: (1) pulse width limited by safe operating area. (2) i sd 12 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd = 80% v (br)dss . (3) v ds 480 v table 3: thermal data symbol parameter value unit to -220 ipak r thj -case thermal resistance junction - case max. 1.14 c/w r thj - amb thermal resistance junction - ambient max. 62.5 100 c/w table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 2.9 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 130 mj
electrical characteristics STP16N60M2, stu16n60m2 4 / 16 docid027198 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified). table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t c = 125 c 100 a i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on- resistance v gs = 10 v, i d = 6 a 0.28 0.32 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 700 - pf c oss output capacitance - 38 - pf c rss reverse transfer capacitance - 1.2 - pf c oss eq. (1) equivalent output capacitance v ds = 0 v to 480 v, v gs = 0 v - 140 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5.3 - q g total gate charge v dd = 480 v, i d = 12 a, v gs = 10 v (see figure 17: "gate charge test circuit" ) - 19 - nc q gs gate - source charge - 3.3 - nc q gd gate - drain charge - 9.5 - nc notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 6 a r g = 4.7 , v gs = 10 v (see figure 16: "switching times test circuit for resistive load" and figure 21: "switching time waveform" ) - 10.5 - ns t r rise time - 9.5 - ns t d(off) turn - off- delay time - 58 - ns t f fall time - 18.5 - ns
STP16N60M2, stu16n60m2 el ectrical characteristics docid027198 rev 1 5 / 16 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source- drain current - 12 a i sdm (1) source- drain current (pulsed) - 48 a v sd (2) forward on voltage v gs = 0 v, i sd = 12 a - 1.6 v t rr reverse recovery time i sd = 12 a, di/dt = 100 a/s, v dd = 60 v (see figure 18: "test circuit for inductive load switching and diode recovery times" ) - 316 ns q rr reverse recovery charge - 3.25 c i rrm reverse recovery current - 20.5 a t rr reverse recovery time i sd = 12 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 18: "test circuit for inductive load switching and diode recovery times" ) - 454 ns q rr reverse recovery charge - 4.8 c i rrm reverse recovery current - 21 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STP16N60M2, stu16n60m2 6 / 16 docid027198 rev 1 2.1 electrical characteristics (curves) figure 2 : to - 220 safe operating area figure 3 : to - 220 thermal impedance figure 4 : ipak safe operating area figure 5 : ipak thermal impedance figure 6 : output characteristics figure 7 : transfer characteristics cg20930 t p z th = k r thj-c = t p / ? 10 -2 10 -1 k ? = 0.5 = 0.2 = 0.1 = 0.01 = 0.02 = 0.05 single pulse z th = k r thj-c = t p / ? t p ? t p (s) 10 -1 10 -2 10 -3 10 -4 10 -5 gc20460 k t p (s) 10 2 10 -3 10 -4 10 -5 10 1 10 -2 10 -1 10 0 = 0.5 = 0.2 = 0.1 = 0.01 single pulse = 0.02 = 0.05 t p ? z th = kr thj-c = t p / ?
STP16N60M2, stu16n60m2 electrical characteristics docid027198 rev 1 7 / 16 figure 8 : normalized gate threshold voltage vs. temperature figure 9 : normalized v(br)dss vs. temperature figure 10 : s tatic drain - source on - resistance figure 11 : normalized on - resistance vs. temperature figure 12 : gate charge vs. gate - source voltage figure 13 : capacitance variations
electrical characteristics STP16N60M2, stu16n60m2 8 / 16 docid027198 rev 1 figure 14 : output capacitance stored energy figure 15 : source - drain diode forward characteristics
STP16N60M2, stu16n60m2 test circuits docid027198 rev 1 9 / 16 3 test circuits figure 16 : switching times test circuit for resistive load figure 17 : gate charge test circuit figure 18 : test circuit for inductive load switching and diode recovery times figure 19 : unclamped inductive load test circuit figure 20 : unclamped inductive waveform figure 21 : switching time waveform am01469v1 v dd 47 k 1 k 47 k 2.7 k 1 k 12 v v i v gs 2200 f p w i g = const 100 100 nf d.u.t. v g am01470v1 a d d.u. t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd d.u. t. v (b r )d s s v dd v dd v d i dm i d am01472v1 am01473v1 0 v gs 90% v ds t on 90% 10% 90% 10% t d(on) t r t t d(off) t f 10% 0 off
package mechanical data STP16N60M2, stu16n60m2 10 / 16 docid027198 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STP16N60M2, stu16n60m2 package mechanical data docid027198 rev 1 11 / 16 4.1 to - 220 type a package information figure 22 : to - 220 type a package outline
package mechanical data STP16N60M2, stu16n60m2 12 / 16 docid027198 rev 1 table 9: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
STP16N60M2, stu16n60m2 package mechanical data docid027198 rev 1 13 / 16 4.2 ipak (to - 251) type a package information figure 23 : ipak (to - 251) type a drawing
package mechanical data STP16N60M2, stu16n60m2 14 / 16 docid027198 rev 1 table 10: ipak (to - 251) type a mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
STP16N60M2, stu16n60m2 revision history docid027198 rev 1 15 / 16 5 revision history table 11: document revision history date revision changes 11- mar -2015 1 initial release.
STP16N60M2, stu16n60m2 16 / 16 docid027198 rev 1 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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